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SD4590
RF & MICROWAVE TRANSISTORS 800-960 MHz CELLULAR BASE STATION
.GOLD . .I .COMMON . .HI .26 .I
METALLIZATION DIFFUSED EMITTER BALLASTING NTERNAL INPUT/OUTPUT MATCHING EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION G H SATURATED POWER CAPABILITY VOLT, 900 MHz PERFORMANCE POUT = 150 W MIN. GAIN = 8.5 dB MIN. IMD3 = -28dB MAX. @ POUT = 150W PEP NHERENT RUGGEDNESS: LOAD MISMATCH TOLERANCE OF 5:1 MIN. VSWR 3 dB OVERDRIVE CAPABILITY
.400 x .860 4LFL (M208) epoxy sealed ORDER CO DE SD4590 BRANDING SD4590
PIN CONNECTION
DESCRIPTION The SD4590 is designed for both analog and digital cellular base stations over the 800 to 960 MHz frequency range, specifically those systems requiring the high linearity and efficiency afforded by class AB operation. Integrated input/output prematching simplifies amplifier design. Ruggedness, MTTF, and linearity are enhanced using diffused emitter resistors and refractory/gold metallization.
1. Collector 2. Emitter
3. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Valu e Unit
VCBO VCEO VEBO IC PDISS TJ TSTG
Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
65 28 3.5 25 300 +200 - 65 to +150
V V V A W C C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 0.60 C/W
January 22, 1998
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SD4590
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Con dition s Valu e Min. Typ. Max. Unit
BVCBO BVCEO BVCER BVEBO ICEO hFE
IC = 50mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 5V
VBE = 0V IB = 0mA RBE = 75 IC = 0mA VBE = 0V IC = 6A
65 28 33 3.5 -- 25
80 30 40 4.0 -- 45
-- -- -- -- 10 120
V V V V mA --
Test ed per side
DYNAMIC
Symbol Test Conditio ns Valu e Min. Typ. Max. Unit
COB
f = 1.0 MHz VCB = 26V for information only - this part is collector matched
--
75
--
pF
Test ed per side
DYNAMIC (CW)
Symbol Test Conditio ns Valu e Min. Typ. Max. Unit
PIN POUT GP c P1dB OVD
f = 900MHz VCE = 26V f = 900MHz VCE = 26V f = 900MHz VCE = 26V f = 900MHz VCE = 26V f = 900MHz VCE = 26V
ICQ = 2 x 200mA POUT = 150W ICQ = 2 x 200mA PIN = 21W ICQ = 2 x 200mA POUT = 150W ICQ = 2 x 200mA POUT = 150W ICQ = 2 x 200mA
-- 150 8.5 50 150 175 9.5 55 160
21 -- --
W W dB % W
f = 900MHz VCC = 26V ICQ = 2 x 200mA Set POUT = 150W; Increase PIN 3dB
No Degradation in Device Performance
DYNAMIC (Two-Tone)
Symbol Test Conditio ns Valu e Min. Typ. Max. Unit
*GP *c *IMD3
VCE = 26V VCE = 26V VCE = 26V
ICQ = 2 x 200mA ICQ = 2 x 200mA ICQ = 2 x 200mA
POUT = 150W PEP POUT = 150W PEP POUT = 150W PEP
8.5 30 --
9.5 35 -32
-- -- -28
dB % dBT
*Load ICQ = 2 x 200mA POUT = 150W PEP VCE = 26V Mismatch VSWR = 5:1 MIN @ All phase angles *OVD ICQ = 2 x 200mA VCE = 26V Set POUT = 150W PEP; Increase PIN 3dB
*Note: f1 f2
No Degradation in Device Performance No Degradation in Device Performance
= 900.00 = 900.10
MHz MHz
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January 22, 1998
SD4590
TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT
VCE = 26V ICQ = 400mA 860 MHz 900 MHz
POWER OUTPUT vs FREQUENCY
PIN
=
36W 30W
960 MHz
24W 18W 12W 6W VCE = 26V ICQ = 400mA
POWER OUTPUT vs SUPPLY VOLTAGE
FREQ = 900MHz ICQ = 400mA PIN
INTERMODULATION DISTORTION vs POWER OUTPUT
ORDER 3RD 5TH
=
36W 24W
16W 7TH 8W 9TH F1 = 900.00MHz F2 = 900.10MHz VCE = 26V ICQ = 400mA
POWER GAIN vs POWER OUTPUT
ICQ
BROADBAND PERFORMANCE
=
1200mA
POWER GAIN (dB)
PG
900mA 600mA
C
POUT = 150WPEP VCE = 26V ICQ = 400mA
400mA RL IMD 300mA FREQ = 900MHz VCE = 26V
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SD4590
SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES
ZIN A B
CONDITIONS: VCE = 26V ICQ = 2 x 200mA POUT = 150W PEP IMD3 -28dBT ( f1 f2 = 100KHz)
B
A ZCL FREQ. 800 MHz 820 MHz 840 MHz 860 MHz 880 MHz 900 MHz 920 MHz 940 MHz 960 MHz ZIN () 4.25 + j 12.25 4.75 + j 13.25 5.25 + j 12.50 4.75 + j 10.25 6.25 + j 9.00 7.75 + j 10.25 6.50 + j 11.50 6.50 + j 10.25 8.50 + j 9.50 9.25 + j 11.50 8.50 + j 13.25 ZCL () 5.75 - j 4.25 5.00 - j 2.75 5.50 - j 2.50 5.00 - j 3.00 4.60 - j 2.90 4.25 - j 2.90 3.95 - j 2.90 3.80 - j 2.80 3.40 - j 2.85 3.10 - j 3.00 2.75 - j 3.15
NOTE:A = 800MHz B = 1000MHz (Measured in 10MHz increments)
980 MHz 1000 MHz
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January 22, 1998
SD4590
TEST CIRCUIT
Balun 1, 2 : 50 Coaxial Cable Length 2.2" C1, C2, C23, C25 C3, C4, C21, C22 C5, C16 C6, C9 C7, C10 C8, C11, C24, C26 C13, C17 C12 C14, C18 C15, C19 : 75pF Ceramic Chip, ATC B : : : : : : : : : 2 x 47pF Ceramic Chip, ATC B 0.8 - 8pF Variable, JOHANSON Giga-Trim 750pF Ceramic Chip, ATC B 39nF Ceramic Chip, ATC B 47F , 50V Electrolytic 100F , 50V Electrolytic 9.1pF, Ceramic Chip, ATC A 39nF Ceramic Chip (OPTIONAL) 750pF Ceramic Chip (OPTIONAL)
C20 C27 L1, L5, L2, L6, L4, L8 L3, L7
: 1.3pF Ceramic Chip, ATC B : 0.7pF Ceramic Chip, ATC B
: 12 Turns, #20 AWG, 0.15" I.D. (Tight) : 4 Turns, #20 AWG, 0.13" I.D. (1:1)
R1, R2, R3, R4 Board Material
: 5 x 50 Chip Resistor
: ROGERS, Er = 2.55, Height 1 oz. Cu. See Photomaster for Microstrip Lines.
= 31.25 mil
January 22, 1998
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SD4590
PHOTOMASTER OF TEST CIRCUIT
Approximately 75% of Original
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January 22, 1998
SD4590
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0208 UDCS No. 1011409 rev C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as criti cal components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1997 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Swit zerland Taiwan - Thailand - United Kingdom - U.S.A.
January 22, 1998
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